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Identification of the classification and measurement of FET

Symbols: the "Q, VT", FET referred to as FET, is a semiconductor device is to control the output current through the voltage, the voltage control device     FET is divided into three very        extremely

drain : D (for electrode) 

    S is extremely source (output pole)
the very gate of the G and (control)     




   D and S poles are used interchangeably       FET Legend: FET Category:    FET channel points can be divided into can be seen in the symbol map for the N-and P-channel tube (not the same as the direction of the arrow in the middle).    Material points can be divided into junction tubes and insulated gate tube, insulated gate type is further divided into depletion-mode and enhanced general on the motherboard are mostly insulated gate tube is referred to as the MOS transistor, and most of the enhanced N-channel , followed by enhanced P-channel junction pipe and the depletion tube almost no. FET characteristics:     1, working conditions: D, very have a power supply, the G pole should have control voltage     N-channel field on the motherboard more than, G voltage the higher the higher the S pole output voltage     field pipe G voltage up to 12V on the motherboard, the DS completely turn-on, individual motherboard on a 5V turn-on     field tube of DS features interchangeable    N-channel tube conduction cut-off voltage:     conduction conditions: VG > VS, VGS = 0.45 - 3V, a conduction state, and VGS greater the ID of the greater cut-off condition: VG

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